Electronic device and method of manufacturing electronic device

ABSTRACT

The disclosure provides an electronic device and a method of manufacturing an electronic device. The electronic device includes a first substrate, a plurality of light-emitting diodes, a second substrate, a transparent material layer, and a sealing material. The first substrate comprises a first substrate body. The plurality of light-emitting diodes are disposed on the first substrate body. The second substrate is disposed opposite to the first substrate, and comprises a second substrate body. The transparent material layer is disposed between the first substrate and the second substrate. The sealing material is disposed between the first substrate and the second substrate and surrounds the transparent material layer. A distance between a bottom surface of the sealing material and a top surface of the first substrate body is less than a distance between a top surface of the sealing material and a bottom surface of the second substrate body.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of and claims thepriority benefit of a prior application Ser. No. 17/026,325, filed onSep. 21, 2020, which claims the priority benefit of China applicationserial no. 201910955815.8, filed on Oct. 9, 2019. The entirety of eachof the above-mentioned patent applications is hereby incorporated byreference herein and made a part of this specification.

BACKGROUND Technical Field

The disclosure relates to an electronic device and a method ofmanufacturing an electronic device.

Description of Related Art

With the advancement in technology, the electronic devices have beenincorporated into various types of products, such as the electronicdevices having the light-emitting diodes. As the requirements for theelectronic devices continue to increase, it has become one of thedirections for development to increase the operating service life of theelectronic device or improve the packaging technique for the electronicdevices.

SUMMARY

According to an embodiment of the disclosure, an electronic deviceincludes a first substrate, a plurality of light-emitting diodes, asecond substrate, a transparent material layer, and a sealing material.The first substrate comprises a first substrate body. The plurality oflight-emitting diodes are disposed on the first substrate body. Thesecond substrate is disposed opposite to the first substrate, andcomprises a second substrate body. The transparent material layer isdisposed between the first substrate and the second substrate. Thesealing material is disposed between the first substrate and the secondsubstrate and surrounds the transparent material layer. A distancebetween a bottom surface of the sealing material and a top surface ofthe first substrate body is less than a distance between a top surfaceof the sealing material and a bottom surface of the second substratebody.

According to an embodiment of the disclosure, a method of manufacturingan electronic device includes the following steps. A first substrate anda second substrate are provided, and a plurality of light-emitting diesare disposed on the first substrate. A transparent material layer and asealing material are disposed on the first substrate or the secondsubstrate, and the sealing material surrounds the transparent materiallayer. The first substrate and the second substrate are assembled.

To make the aforementioned more comprehensible, several embodimentsaccompanied with drawings are described in detail as follows.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the disclosure, and are incorporated in and constitutea part of this specification. The drawings illustrate exemplaryembodiments of the disclosure and, together with the description, serveto explain the principles of the disclosure.

FIG. 1A to FIG. 1D are schematic views showing part of a manufacturingprocess of an electronic device according to an embodiment of thedisclosure, and FIG. 1D is a schematic cross-sectional view showing theelectronic device according to the embodiment of the disclosure.

FIG. 2 is a schematic top view showing an electronic device according toan embodiment of the disclosure.

FIG. 3 is a flowchart showing a method of manufacturing an electronicdevice according to an embodiment of the disclosure.

FIG. 4 is a schematic cross-sectional view showing an electronic deviceaccording to another embodiment of the disclosure.

FIG. 5 is a schematic top view showing an electronic device according toanother embodiment of the disclosure.

FIG. 6 is a schematic cross-sectional view showing an electronic deviceaccording to another embodiment of the disclosure.

FIG. 7 is a schematic cross-sectional view showing an electronic deviceaccording to another embodiment of the disclosure.

DESCRIPTION OF THE EMBODIMENTS

The disclosure may be understood by referring to the following detaileddescription with reference to the accompanying drawings. It noted thatfor comprehension of the reader and simplicity of the drawings, in thedrawings of the disclosure, only a part of the electronic device isshown, and specific components in the drawings are not necessarily drawnto scale. Moreover, the quantity and the size of each component in thedrawings are only schematic and are not intended to limit the scope ofthe disclosure.

“A structure (or layer, component, substrate, etc.) being locatedon/above another structure (or layer, component, substrate, etc.)” asdescribed in the disclosure may mean that the two structures areadjacent and directly connected, or may mean that the two structures areadjacent but are not directly connected. “Not being directly connected”means that at least one intermediate structure (or intermediate layer,intermediate component, etc.) is present between the two structures,where the lower surface of one structure is adjacent or directlyconnected to the upper surface of the intermediate structure, the uppersurface of the other structure is adjacent or directly connected to thelower surface of the intermediate structure, and the intermediatestructure may be composed of a single-layer or multi-layer physicalstructure or non-physical structure and is not specifically limitedherein. In the disclosure, when one structure is disposed “on” anotherstructure, it may mean that the one structure is “directly” on theanother structure, or may mean that the one structure is “indirectly” onthe another structure (i.e., at least one other structure is interposedbetween the one structure and the another structure).

Electrical connection or coupling as described in the disclosure mayboth refer to direct connection or indirect connection. In the case ofdirect connection, the terminal points of two components of the circuitare directly connected or are connected to each other via a conductorline. In the case of indirect connection, a combination of one of aswitch, a diode, a capacitor, an inductor or another non-conductor linesegment and at least one conductive segment or a resistor, or acombination of at least two of the above components and at least oneconductive segment or a resistor is present between the terminal pointsof two components on the circuit.

In the disclosure, the thickness, the length, and the width may beselectively measured by an optical microscope and/or a scanning electronmicroscope (SEM), but the disclosure is not limited thereto. Inaddition, there may be a certain error between any two values ordirections used for comparison. If a first value is equal to a secondvalue, it is implied that there may be an error of about 10% between thefirst value and the second value; if a first direction is perpendicularto a second direction, the angle between the first direction and thesecond direction may be 80 degrees to 100 degrees; and if the firstdirection is parallel to the second direction, the angle between thefirst direction and the second direction may be 0 degrees to 10 degrees.

The terms “about”, “substantially”, or “approximately” are “generally”interpreted as being within a range of plus or minus 20% of a givenvalue or range, or as being within a range of plus or minus 10%, plus orminus 5%, plus or minus 3%, plus or minus 2%, plus or minus 1%, or plusor minus 0.5% of the given value or range.

Reference will now be made in detail to the exemplary embodiments of thedisclosure, examples of which are illustrated in the accompanyingdrawings. Whenever possible, the same reference numerals are used torepresent the same or similar parts in the accompanying drawings anddescription.

In the disclosure, the features of multiple embodiments to be describedbelow may be replaced, recombined, or mixed to form other embodimentswithout departing from the spirit of the disclosure. The features ofmultiple embodiments may be used in combination as long as suchcombination does not depart from the spirit of the disclosure or lead toconflict.

In the disclosure, the electronic device may include a display device, atouch display device, a light-emitting device, an antenna device, asensing device, a splicing device, or electronic devices of any suitabletypes, but is not limited thereto.

The electronic device may include an inorganic light-emitting diode(LED), such as a micro-LED/mini-LED, a quantum dot (QD) material, aquantum dot light-emitting diode (QLED/QDLED), a fluorescence material,a phosphor material, other suitable materials or a combination of theabove, but is not limited thereto.

In addition, the electronic device may be a color display device or amonochrome display device, the shape of the electronic device may be arectangle, a circle, a polygon, a shape with curved edges or othersuitable shapes. In the disclosure, the electronic device is rectangularand is a color electronic device as an example, but is not limitedthereto.

FIG. 1A to FIG. 1D are schematic views showing part of a manufacturingprocess of an electronic device according to an embodiment of thedisclosure. The electronic device 100A comprises a first substrate 110,a plurality of light-emitting dies 120, a transparent material layer150P, a sealing material 160 and a second substrate 140, but is notlimited thereto.

Referring to FIG. 1A, a first substrate 110 is provided, and a pluralityof light-emitting dies 120 are disposed on the first substrate 110. Thefirst substrate 110 includes a first substrate body 112 and/or acomponent layer 114. The component layer 114 is disposed on the firstsubstrate body 112, the plurality of light-emitting dies 120 aredisposed on the component layer 114 and electrically connected to thecomponent layer 114. In some embodiments, the material of the firstsubstrate body 112 may include a transparent substrate or anon-transparent substrate. In some embodiments, the first substrate body112 may include a rigid substrate, a flexible substrate or a combinationthereof, but is not limited thereto. For example, the material of thefirst substrate body 112 includes glass, quartz, sapphire, ceramic,polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET),rubber, other suitable materials or a combination of the abovematerials, but is not limited thereto. The component layer 114 includesa circuit structure configured to drive the light-emitting dies 120. Forexample, the component layer 114 may include a plurality of scan lines,a plurality of data lines, a plurality of transistors, and/or aplurality of electrodes, but is not limited thereto. The plurality oflight-emitting dies 120 may be disposed on the first substrate 110 in anarray, but is not limited thereto. In some embodiments, thelight-emitting die 120 may be electrically connected to the componentlayer 114 via a conductive pad (not shown), but is not limited thereto.In some embodiments, the light-emitting die 120 may emit blue light, UVlight or another suitable color light, but is not limited thereto. Insome embodiments, the light-emitting die 120 may include a p-typesemiconductor layer and an n-type semiconductor layer, but is notlimited thereto. In some embodiments, the light-emitting die 120 mayinclude a micrometer-level or millimeter-level light-emitting die, butis not limited thereto, and the size of the light-emitting die 120 maybe adjusted according to the requirements. In some embodiments, theelectronic device is a display device, the electronic device may includea display region AR and a non-display region NR surrounding the displayregion AR, the plurality of light-emitting dies 120 are disposed in thedisplay region AR. As shown in FIG. 1A to FIG. 1D and FIG. 2 , theregion of the display region AR may be substantially defined as asmallest region including all the light-emitting dies 120. As shown inFIG. 2 , the region of the display region AR is rectangular, but is notlimited thereto. The shape of the region of the display region AR may beadjusted according to the requirements and may include a triangle, ashape with curved edges, a polygon or another irregular shape, but isnot limited thereto.

Referring to FIG. 1A, the electronic device comprises a filler layer130, and the filler layer 130 may be disposed on the first substrate110. The filler layer 130 is disposed adjacent to or around thelight-emitting dies 120. In some embodiments, as shown in FIG. 1A, thefiller layer 130 is disposed between the plurality of light-emittingdies 120. In some embodiments, the filler layer 130 may be configured tofix or protect the light-emitting dies 120. In some embodiments, in across section (e.g., the one shown in FIG. 1A), a maximum distance Dabetween the upper surface (i.e., the surface away from the firstsubstrate body 112) of the filler layer 130 and the first substrate body112 may be less than or equal to a maximum distance Db between the uppersurface (i.e., the surface away from the first substrate body 112) ofthe light-emitting die 120 and the first substrate body 112. In someembodiments (not shown), in a cross section, the maximum distance Dabetween the filler layer 130 and the first substrate body 112 may begreater than or equal to the maximum distance Db between thelight-emitting die 120 and the first substrate body 112. In someembodiments (not shown), the filler layer 130 may cover at least part ofthe light-emitting die 120. In some embodiments, the filler layer 130may include a transparent material, a non-transparent material or acombination thereof. In some embodiments, the filler layer 130 mayinclude a single-layer structure or a composite-layer structure. In someembodiments, the filler layer 130 may have light-shielding properties.In some embodiments, the material of the filler layer 130 may include anepoxy resin material, an acrylic material other suitable materials, or acombination thereof.

Referring to FIG. 1A, in some embodiments, the electronic deviceincludes a second substrate 140, and the second substrate 140 isdisposed opposite to the first substrate 110. In some embodiments, thesecond substrate 140 includes a second substrate body 142, alight-shielding pattern layer BK, a plurality of color filter structuresCF and/or a plurality of wavelength conversion structures WT. The secondsubstrate body 142 may have the same or similar material as the firstsubstrate body 112, which will not be repeatedly described herein. Insome embodiments, the light-shielding pattern layer BK is adjacent to orsurrounds the color filter structures CF and/or the wavelengthconversion structures WT. In some embodiments, the light-shieldingpattern layer BK has multiple openings and forms a grid structure. Insome embodiments, in a normal direction Z of the second substrate body142, the color filter structure CF overlaps the opening of the gridstructure. In some embodiments, the material of the light-shieldingpattern layer BK may include a black resin, a black photoresist, a metalor a combination thereof, but is not limited thereto. In someembodiments, the color filter structures CF are respectively disposedcorrespondingly on the light-emitting dies 120 to adjust or convert thecolor of the light emitted by the light-emitting dies 120. The colorfilter structure CF may include a red filter structure, a green filterstructure, a blue filter structure or filter structures of othersuitable colors, but is not limited thereto. In some embodiments, asshown in FIG. 1A, the color filter structure CF is disposed between thewavelength conversion structure WT and the second substrate body 142. Inthe normal direction Z of the second substrate body 142, the wavelengthconversion structure WT may overlap the color filter structure CF. Insome embodiments, the material of the wavelength conversion structure WTmay include a quantum dot material, a phosphor material, a fluorescencematerial, other suitable wavelength conversion materials or acombination thereof, but is not limited thereto. In other words, thewavelength conversion structure WT can convert the light emissionwavelength of the light-emitting die 120 into light of anotherwavelength. In some embodiments, the wavelength range converted by thewavelength conversion structure WT may substantially correspond to thecolor of the color filter structure CF. For example, in the normaldirection Z of the second substrate body 142, the red wavelengthconversion structure and the red filter structure may overlap eachother, the green wavelength conversion structure and the green filterstructure may overlap each other, and the blue wavelength conversionstructure and the blue filter structure may overlap each other, but thedisclosure is not limited thereto.

Referring to FIG. 1B, in some embodiments, a transparent material layer150P may be disposed on the first substrate 110, and the transparentmaterial layer 150P is disposed on the filler layer 130 and/or theplurality of light-emitting dies 120. In some embodiments, thetransparent material layer 150P may cover the plurality oflight-emitting dies 120. In some embodiments, the transparent materiallayer 150P is disposed on the first substrate 110 by a coating method.The coating method includes a screen printing method, a dispensercoating method, a multi-nozzle coating method, a slit coating method, agravure printing method, an inkjet printing method, an offset printingmethod, a relief printing method or other suitable methods, but is notlimited thereto. It noted that the transparent material layer 150P isnot limited to being disposed on the first substrate 110. In otherembodiments, the transparent material layer 150P may be disposed on thesecond substrate 140. In some embodiments, the light transmittance ofthe material of the transparent material layer 150P is greater than orequal to 90% (≥90%) (e.g., a material having a light transmittancebetween 95% and 99% (95%≤light transmittance≤99%). In some embodiments,the material of the transparent material layer 150P may include anoptical clear resin (OCR) or an optical clear adhesive (OCA), thematerial of the transparent material layer 150P may include an acrylicresin, a silicone resin, an epoxy resin, other suitable materials or acombination of the above materials, but is not limited thereto. In someembodiments, the transparent material layer 150P may have water/oxygenbarrier properties or protection properties, but is not limited thereto.In some embodiments, the transparent material 160 includes awaterproofing material. In some embodiments, the transparent materiallayer 150P may have flowability before curing, when the first substrate110 and the second substrate 140 are subsequently assembled, thetransparent material layer 150P can be more uniformly disposed betweenthe second substrate 140 and the first substrate 110, thereby improvingthe quality of the electronic device. In some embodiments, beforecuring, the transparent material layer 150P has a viscosity range, theviscosity range may be in a range between 10 mPa·s and 200 mPa·s (10mPa·s≤viscosity≤200 mPa·s), but is not limited thereto.

Referring to FIG. 1C, in some embodiments, a sealing material 160P isdisposed on the first substrate 110. In some embodiments, the sealingmaterial 160P surrounds the transparent material layer 150P and islocated in the non-display region NR, but is not limited thereto. Insome embodiments, the sealing material 160P is disposed on the firstsubstrate 110 through a coating method similar to that of thetransparent material layer 150P.

In some embodiments, the transparent material layer 150P and/or thesealing material 160P may be coated by a spray coating or inkjet coatingapparatus. The spray coating or inkjet coating apparatus may include anink jet printer, a jet dispenser, a slit coater, an aerosol jet or asuper-fine ink jet printer, but it is not limited thereto. In someembodiments, the sealing material 160P may be disposed on the firstsubstrate 110 through adhesion. In some embodiments (not shown), aplurality of sealing materials 160P may be disposed. In some embodiments(not shown), in the top view, the plurality of sealing materials 160Pare respectively annular patterns, and the sealing materials 160Psequentially surround the transparent material layer 150. Moreover, theplurality of sealing materials 160P may contact each other afterassembly and/or curing to improve the integrity of the sealing materialsurrounding the transparent material layer 150 after assembly. Forexample, a first annular sealing material 160P may be disposed first,and then another annular sealing material 160P may be disposed, but thedisclosure is not limited thereto. In other embodiments, the pluralityof sealing materials 160P may be disposed at the same time. In someembodiments (not shown), in the top view, the plurality of sealingmaterials 160P may include a plurality of segments, and the segments ofthe sealing materials 160P surround the transparent material layer 150.Moreover, the plurality of sealing materials 160P may contact each otherafter assembly and/or curing, but are not limited thereto. In someembodiments, the contour shapes of the plurality of sealing materials160P projected onto the first substrate 110 may be the same ordifferent. The materials of the plurality of sealing materials 160P maybe the same or different. It is noted herein that the sealing material160P is not limited to being disposed on the first substrate 110. Inother embodiments, the sealing material 160P may be disposed on thesecond substrate 140. After the transparent material layer 150P and thesealing material 160P are disposed on the first substrate 110 or thesecond substrate 140, the first substrate 110 and the second substrate140 may be assembled the sealing material 160P surrounds the transparentmaterial layer 150. For example, the first substrate 110 and the secondsubstrate 140 may be assembled in a vacuum environment. Subsequently,the sealing material 160P may be cured. The curing includes pre-curing,and the detailed process thereof will be described in FIG. 3 . In someembodiments, before curing, the viscosity of the sealing material 160Pmay be greater than the viscosity of the transparent material layer150P. In some embodiments, the material of the sealing material 160P maybe the same as or similar to the material of the transparent materiallayer 150P. However, the material of the sealing material 160P includesmore polymer long chains, the viscosity of the sealing material 160P isgreater than the viscosity of the transparent material layer 150P, butthe disclosure is not limited thereto. In some embodiments, theviscosity of the sealing material 160P is 1000 times or more theviscosity of the transparent material layer 150P, but is not limitedthereto. In some embodiments, the viscosity range of the sealingmaterial 160P may be between 250 Pa·s and 350 Pa·s (250Pa·s≤viscosity≤350 Pa·s), but is not limited thereto. In someembodiments, the sealing material 160P may include a photoinitiator, thesealing material 160P can be cured by light irradiation, but thedisclosure is not limited thereto.

In some embodiments, in the normal direction Z of the second substratebody 142, the sealing material 160P does not overlap or cover theplurality of light-emitting dies 120. In other embodiments, in thenormal direction Z of the second substrate body 142, the sealingmaterial 160P may overlap or cover part of the light-emitting dies 120.In that case, the sealing material 160P may selectively include amaterial having high transmittance properties (e.g., a material having atransmittance greater than or equal to 90% (≥90%)).

Referring to FIG. 1D, the first substrate 110 and the second substrate140 are assembled to form an electronic device 100 a. The assembling ofthe first substrate 110 and the second substrate 140 includes thefollowing steps. First, the second substrate 140 is pressed down, andthe first substrate 110 and the second substrate 140 are adhered throughthe transparent material layer 150P and/or the sealing material 160P.The transparent material layer 150P contacts with the sealing material160P, and the assembling step may be performed in a vacuum environment.Afterwards, the sealing material 160P is irradiated with light (e.g.,ultraviolet light, but is not limited thereto) to perform pre-curing,but the disclosure is not limited thereto. Next, the transparentmaterial layer 150P and the sealing material 160P are heated to performcuring, but it is not limited thereto. In some embodiments, thepre-curing and the curing are performed in a non-vacuum environment(e.g., a general atmospheric pressure environment). When the transparentmaterial layer 150P and the sealing material 160P are moved from avacuum environment to a non-vacuum environment (e.g., a generalatmospheric pressure environment), the sealing material 160P may besqueezed due to the difference in internal and external pressures.Therefore, the sealing material 160P may selectively be a materialhaving a greater viscosity to reduce defects (e.g., fractures and crackscaused by air puncture) of the sealing material 160P resulting from thepressing pressure, and the defects may lead to presence of air betweenthe first substrate 110 and the second substrate 140, or affect theservice life of the electronic device (e.g., shortening the service lifeof the light-emitting die 120) or reliability of the electronic device.In some embodiments, the hardness of the sealing material 160 aftercuring may be greater than the hardness of the transparent materiallayer 150 after curing, but is not limited thereto. In some embodiments,a hardness of the transparent material layer 150 is different from ahardness of the sealing material 160. At this time, the production ofthe electronic device 100 a is completed. Through the configurationrelationship and/or material selection of the transparent material layer150P and the sealing material 160P as described above, it is possible toreduce the probability of the presence of air between the secondsubstrate 140 and the first substrate 110, or to improve the servicelife or reliability of the electronic device.

Although the method of manufacturing the electronic device 100 a of thisembodiment has been described with the above method as an example, themethod of forming the electronic device 100 a of the disclosure is notlimited thereto, and part of the above steps may be deleted or othersteps may be added according to the requirements. In addition, thesequence of the above steps may be adjusted according to therequirements.

In some embodiments, a thickness T of the transparent material layer 150in the electronic device 100 a after the first substrate 110 and thesecond substrate 140 are assembled may be greater than or equal to 2 μmand less than or equal to 20 μm (2 μm≤thickness T≤20 μm), but is notlimited thereto. The thickness T is the maximum thickness of thetransparent material layer 150 in a cross section. For example, thethickness T of the transparent material layer 150 is between 3 μm and 10μm (3 μm≤thickness T≤10 μm), or between 5 μm and 15 μm (5 μm≤thicknessT≤15 μm). In some embodiments, as shown in FIG. 1D, a thickness T1 ofthe sealing material 160 may be greater than or equal to 2 μm and lessthan or equal to 20 μm (2 μm≤thickness T1≤20 μm), but is not limitedthereto. The thickness T1 is the maximum thickness of the sealingmaterial 160 in a cross section. For example, the thickness T1 of thesealing material 160 is between 3 μm and 10 μm (3 μm≤thickness T1≤10μm), or between 5 μm and 15 μm (5 μm≤thickness T1≤15 μm). Through theabove design of the thickness T and/or the thickness T1, it is possibleto reduce the distance between the light-emitting die 120 and thewavelength conversion structure WT in the normal direction Z of thesecond substrate body 142, or reduce irradiation of light emitted by thelight-emitting die 120 to the non-corresponding wavelength conversionstructure WT, which would cause interference and affect the display ofthe image.

Referring to FIG. 1D and FIG. 2 , FIG. 1D is a schematic cross-sectionalview showing an electronic device according to an embodiment of thedisclosure, and FIG. 2 is a schematic top view showing an electronicdevice according to an embodiment of the disclosure. For clarity of thedrawing, FIG. 2 mainly shows the color filter structure CF, thetransparent material layer 150, and the sealing material 160, and othercomponents are omitted. The transparent material layer 150 of FIG. 2 isdisposed in the display region AR of the electronic device 100 a, andthe sealing material 160 is disposed in the non-display region NR of theelectronic device 100 a and surrounds the transparent material layer150. Therefore, the user will not see the sealing material 160 whenviewing the electronic device 100 a. In some embodiments, as shown inFIG. 2 , the sealing material 160 may be in contact with the transparentmaterial layer 150, and an interface I between the sealing material 160and the transparent material layer 150 may be located in the non-displayregion NR, but is not limited thereto.

FIG. 3 is a flowchart showing a method of manufacturing an electronicdevice according to an embodiment of the disclosure. It is noted thatmay the reference numerals and part of the contents of the embodiment ofFIG. 1A to FIG. 1D may apply to the embodiment of FIG. 3 , where thesame or similar numerals are used to indicate the same or similarcomponents, and descriptions of the same technical contents are omitted.In addition, this flowchart is only an example and is not intended tolimit the manufacturing steps of the electronic device.

In step S10, providing a first substrate 110 and a second substrate 140,and a plurality of light-emitting dies 120 are disposed on the firstsubstrate 140. In step S10, the first substrate 110 and/or the secondsubstrate 140 may be selectively cleaned. For example, the firstsubstrate 110 and/or the second substrate 140 may be cleaned by an iongun.

In step S20, disposing a transparent material layer 150P and a sealingmaterial 160P on the first substrate 110 or the second substrate 140,and the sealing material 160P surrounds the transparent material layer150P. Reference may be made to the foregoing embodiment for the methodsof disposing the transparent material layer 150P and the sealingmaterial 160P, which shall not be repeatedly described herein.

In step S30, assembling the first substrate 110 and the second substrate140. In step S30, the first substrate 110 and the second substrate 140may be moved to a vacuum environment to perform assembly.

In step S40, curing the sealing material 160P. The curing in step S40includes pre-curing, but is not limited thereto. For example, the firstsubstrate 110 and the second substrate 140 are moved from the vacuumenvironment, and the sealing material 160P is irradiated with light(e.g., ultraviolet light) to perform pre-curing, but it is not limitedthereto. Through the above pre-curing step, it is possible to reduceadverse phenomena, such as uneven brightness and/or chromatic aberrationresulting from displacement of the first substrate 110 and the secondsubstrate 140.

In step S50, curing the transparent material layer 150P and/or thesealing material 160P. The curing in step S50 includes thermal curing,photo curing, other suitable curing methods or a combination thereof. Insome embodiments, the thermal curing in step S50 may be performed by anoven or a hot plate, but is not limited thereto. After the above steps,the first substrate 110 and the second substrate 140 can be adheredthrough the transparent material layer 150 and/or the sealing material160 to complete the production of the electronic device 100 a.

FIG. 4 is a schematic cross-sectional view showing an electronic device100 b according to another embodiment of the disclosure, and FIG. 5 is aschematic top view showing an electronic device according to anotherembodiment of the disclosure. The main difference between the electronicdevice 100 b of FIG. 4 and the electronic device 100 a in that thesealing material 160 of the electronic device 100 b is further disposedin the display region AR and overlaps or covers part of thelight-emitting dies 120 in the normal direction Z of the secondsubstrate body 142. In some embodiments, the sealing material 160 isdisposed on at least one of the plurality of light-emitting dies 120. Inother words, the interface I between the sealing material 160 and thetransparent material layer 150 is located in the display region AR. Insome embodiments, the sealing material 160 is in contact with the fillerlayer 130. In that case, the material of the sealing material 160 mayselectively have high transmittance properties (e.g., having a lighttransmittance greater than 90% or even having a light transmittancegreater than 95%). In some embodiments, as shown in FIG. 5 , in thenormal direction Z of the second substrate body 142, the sealingmaterial 160 may at least partially overlap the color filter structuresCF located at the periphery. In some embodiments, as shown in FIG. 5 ,in the normal direction Z of the second substrate body 142, theprojection contour of the sealing material 160 is not limited to ahollow rectangle, the shape of the projection contour of the sealingmaterial 160 may be adjusted according to the requirements, the shape ofthe projection contour of the sealing material 160 may include atriangle, a shape with curved edges, a polygon or other irregularshapes, but is not limited thereto. In some embodiments, as shown inFIG. 5 , a width W1 of the sealing material 160 may be greater than orequal to a width W2 of the color filter structure CF of the electronicdevice. In some embodiments (as shown in FIG. 4 and FIG. 5 ), the widthW1 of the sealing material 160 may be greater than or equal to the widthof a sub-pixel, and the width of the sub-pixel may be defined by theopening of the light-shielding pattern layer BK, but is not limitedthereto.

FIG. 6 is a schematic cross-sectional view showing an electronic device100 c according to another embodiment of the disclosure. The maindifference between the electronic device 100 c and the electronic device100 a above lies in that the sealing material 160 of the electronicdevice 100 c may be in contact with the component layer 114. In otherwords, the filler layer 130 may be selectively not disposed between thesealing material 160 and the component layer 114, and the sealingmaterial 160 may surround the filler layer 130 and the transparentmaterial layer 150, but it not limited thereto. In some embodiments, asshown in FIG. 6 , the thickness T1 of the sealing material 160 may begreater than the thickness of the filler layer 130 and/or the thicknessT of the transparent material layer 150.

FIG. 7 is a schematic cross-sectional view showing an electronic device100 d according to another embodiment of the disclosure. The maindifference between the electronic device 100 d and the electronic device100 a above lies in that the electronic device 100 d may selectively notinclude the filler layer 130, and the sealing material 160 and/or thetransparent material layer 150 may be in contact with the componentlayer 114.

According to the above, the sealing material in the electronic device ofthe embodiments of the disclosure is disposed around the transparentmaterial layer. Before curing, the sealing material may selectively havea viscosity greater than that of the transparent material layer, orafter curing, the sealing material may selectively have a hardnessgreater than a hardness of the transparent material layer.

Therefore, it is possible to reduce the probability of the presence ofair between the first substrate and the second substrate afterassembling, or improve the service life or reliability of the electronicdevice.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the disclosed embodimentswithout departing from the scope or spirit of the disclosure. In view ofthe foregoing, it is intended that the disclosure covers modificationsand variations provided that they fall within the scope of the followingclaims and their equivalents.

What is claimed is:
 1. An electronic device comprising a first substratecomprising a first substrate body; a plurality of light-emitting diodesdisposed on the first substrate body; a second substrate disposedopposite to the first substrate, comprising a second substrate body; atransparent material layer disposed between the first substrate and thesecond substrate; and a sealing material disposed between the firstsubstrate and the second substrate and surrounding the transparentmaterial layer; wherein a distance between a bottom surface of thesealing material and a top surface of the first substrate body is lessthan a distance between a top surface of the sealing material and abottom surface of the second substrate body.
 2. The electronic deviceaccording to claim 1, wherein the second substrate further comprises acolor filter structure disposed on the second substrate body.
 3. Theelectronic device according to claim 2, wherein the second substratefurther comprises a wavelength conversion structure disposed on thecolor filter structure.
 4. The electronic device according to claim 3,wherein the second substrate further comprises a light-shielding patternlayer adjacent to the wavelength conversion structure.
 5. The electronicdevice according to claim 1, wherein the sealing material is in contactwith the transparent material layer.
 6. The electronic device accordingto claim 1, wherein the first substrate further comprises a componentlayer disposed on the first substrate body, and the plurality oflight-emitting diodes are disposed on the component layer andelectrically connected to the component layer.
 7. The electronic deviceaccording to claim 6, wherein the sealing material is in contact withthe component layer.
 8. The electronic device according to claim 1,further comprising a filler layer at least disposed between theplurality of light-emitting diodes.
 9. The electronic device accordingto claim 1, wherein the second substrate is adhered to the firstsubstrate through the transparent material layer and the sealingmaterial.
 10. A method of manufacturing an electronic device,comprising: providing a first substrate and a second substrate, whereina plurality of light-emitting diodes are disposed on the firstsubstrate, wherein the first substrate comprises a first substrate bodyand the second substrate comprises a second substrate body; disposing atransparent material layer and a sealing material on the first substrateor the second substrate, wherein the sealing material surrounds thetransparent material layer; and assembling the first substrate and thesecond substrate, wherein a distance between a bottom surface of thesealing material and a top surface of the first substrate body is lessthan a distance between a top surface of the sealing material and abottom surface of the second substrate body.
 11. The method ofmanufacturing an electronic device according to claim 10, wherein afterthe step of assembling the first substrate and the second substrate, themethod further comprises curing the sealing material.
 12. The method ofmanufacturing an electronic device according to claim 10, furthercomprising curing the transparent material layer.